2SJ599(0)-Z-E1-AZ

Description：TRANSISTOR
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)

SKU:040a89025e7a Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：TRANSISTOR
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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2SJ599(0)-Z-E1-AZ

Overview

The Renesas 2SJ599 is a P-channel power MOSFET designed for solenoid, motor, and lamp driver applications. It features low on-state resistance of 75 mΩ max at VGS = –10 V and 111 mΩ max at VGS = –4.0 V, both tested at ID = –10 A. The device supports a drain current of –20 A DC and –50 A pulse at TC = 25°C. Key electrical parameters include a drain-source voltage rating of –60 V, input capacitance of 1300 pF typ, and total gate charge of 26 nC. It operates within a channel temperature range up to 150°C and is available in TO-251 or TO-252 packages.

Feature Summary

Low on-state resistance for efficient power switching
Built-in gate protection diode against ESD
Designed specifically for solenoid, motor, and lamp drivers

Applications

Solenoid drivers
Motor drivers
Lamp drivers

Procurement Notes

Verify the specific package variant (TO-251 MP-3 or TO-252 MP-3Z) required for your design. Confirm the quality grade is Standard unless otherwise specified. Ensure compliance with export control laws if applicable. Check for the latest product information directly from Renesas Electronics sales offices before purchasing, as specifications are subject to change without notice.

Selection Notes

Select this component for applications requiring robust P-channel switching with moderate current capabilities. Consider the thermal dissipation limits, which drop significantly from 35 W at case temperature to 1.0 W at ambient temperature. Evaluate the need for external protection if gate voltages may exceed the rated ±20 V limit despite the internal diode.

Part Context

This part originates from NEC Electronics Corporation, which merged with Renesas Technology Corporation in April 2010. Renesas Electronics Corporation now holds all business rights. The datasheet retains the original NEC branding but is a valid Renesas document. This historical context explains the presence of old company names in catalog references.