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Product Detailed Parameters
- Description：MP-3ZK
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：31mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：63 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3300 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta), 65W (Tc)
- Operating Temperature：150°C
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (MP-3ZK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The 2SJ601-ZK-E1-AZ is a P-channel silicon small signal MOSFET manufactured by Renesas Electronics Corporation. It is housed in a TO-251 (MP-3) package with three pins. The device features a minimum drain-source breakdown voltage of 60 V and supports a maximum continuous drain current of 36 A. Key electrical characteristics include a maximum drain-source on-resistance of 0.03 Ω, a maximum feedback capacitance of 230 pF, and enhancement mode operation.
Feature Summary
- P-channel metal-oxide semiconductor construction for signal switching applications
- Integrated body diode configuration within the single FET structure
- Enhancement mode operation for standard logic control compatibility
Applications
- Small signal power switching circuits
- General purpose electronic component integration
- Low voltage DC load management systems
Procurement Notes
Verify the specific suffix -ZK-E1-AZ against official Renesas documentation to confirm compliance status and exact pinout configuration. Ensure the TO-251 package dimensions match your PCB footprint requirements. Confirm that the 60V rating and 36A current capacity align with your circuit design specifications before finalizing procurement.
Selection Notes
Select this component when a P-channel MOSFET with low on-resistance is required for small signal applications. The TO-251 package offers a balance between thermal performance and board space efficiency. Consider the 0.03 Ω resistance value for minimizing conduction losses in high-current paths up to 36 A.
Part Context
This part belongs to the Renesas discrete semiconductor transistor family. It utilizes silicon technology for reliable small-signal performance. The TO-251 package is a standard surface-mount form factor widely used in consumer and industrial electronics for efficient heat dissipation relative to its physical size.
Replacement Considerations
Consult official Renesas cross-reference guides for verified substitutes. Generic equivalents may differ in on-resistance or breakdown voltage ratings. Verify package compatibility and pin assignments before substituting.
