2SJ601(0)-Z-E1-AZ

Description：TRANSISTOR
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)

SKU:afa033034eca Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：TRANSISTOR
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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2SJ601(0)-Z-E1-AZ

Overview

The 2SJ601 is a P-channel power MOSFET manufactured by Renesas Electronics. It features a maximum drain-source voltage of -60 V and a continuous drain current of -36 A at 25°C case temperature. The device offers low on-state resistance, with RDS(on)1 at 31 mΩ max (VGS = -10 V, ID = -18 A) and RDS(on)2 at 46 mΩ max (VGS = -4.0 V, ID = -18 A). Input capacitance is typically 3300 pF. It includes a built-in gate protection diode and body diode. Available in TO-251 and TO-252 packages.

Feature Summary

Designed for solenoid, motor, and lamp driver applications
Low on-state resistance for efficient switching
Built-in gate protection diode against ESD
Capable of handling single avalanche energy

Applications

Solenoid drivers
Motor drivers
Lamp drivers

Procurement Notes

Verify the specific package variant required, as the 2SJ601 is available in both TO-251 and TO-252 configurations. Confirm the quality grade matches the intended application, as Renesas classifies products into Standard, High Quality, or Specific grades. Ensure compliance with export control laws if applicable. Contact a Renesas sales office for the latest product information and availability details before purchasing.

Selection Notes

Select this component based on its -60 V breakdown voltage and -36 A continuous current rating. Consider the thermal performance, noting a total power dissipation of 65 W at 25°C case temperature. Evaluate the gate drive requirements, specifically the VGS(off) range and the need for external protection if voltages exceed rated limits. Check the transient thermal resistance characteristics for pulsed operation needs.

Part Context

This part belongs to the Renesas (formerly NEC Electronics) P-channel MOSFET lineup. The document indicates a merger between NEC Electronics Corporation and Renesas Technology Corporation in April 2010. The datasheet is issued under Renesas Electronics Corporation but retains references to the old company name in some catalog contexts.