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The 2SJ605-ZJ-E1-AZ is a P-channel power MOSFET designed for high-current switching applications. It features super low on-state resistance, with R DS(on)1 at 20 mΩ MAX (V GS =–10 V, I D =–33 A) and R DS(on)2 at 31 mΩ MAX (V GS =–4.0 V, I D =–33 A). The device exhibits low input capacitance of 4600 pF TYP (V DS =–10 V, V GS = 0 V) and includes a built-in gate protection diode. It is housed in the TO-263 package.
Verify the specific ordering suffix -E1-AZ against official Renesas documentation to confirm exact packaging and compliance status. Ensure the TO-263 package variant matches design requirements. Confirm availability through authorized channels as distribution details vary.
Select this component for designs requiring robust P-channel switching with minimal conduction losses. The logic-level drive capability allows compatibility with standard control voltages. Verify thermal management needs based on the specified on-resistance values under expected load conditions.
This part belongs to the NEC (Renesas) power MOSFET family, specifically engineered for industrial use. It represents a continuation of legacy NEC semiconductor products now managed by Renesas Electronics Corporation, maintaining established performance characteristics for power management solutions.
Check for direct substitutes within the 2SJ605 series such as 2SJ605-S or 2SJ605-ZJ if package variations are acceptable. Verify pinout and electrical parameters match exactly before substitution.