2SJ605-ZJ-E1-AZ

2SJ605-ZJ-E1-AZ

$1.71
  • Description:P-CHANNEL POWER MOSFET
  • Series:*
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk

SKU:4b27665aa3b7 Category: Brand:

  
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Product Detailed Parameters

  • Description:P-CHANNEL POWER MOSFET
  • Series:*
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

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2SJ605-ZJ-E1-AZ

Overview

The 2SJ605-ZJ-E1-AZ is a P-channel power MOSFET designed for high-current switching applications. It features super low on-state resistance, with R DS(on)1 at 20 mΩ MAX (V GS =–10 V, I D =–33 A) and R DS(on)2 at 31 mΩ MAX (V GS =–4.0 V, I D =–33 A). The device exhibits low input capacitance of 4600 pF TYP (V DS =–10 V, V GS = 0 V) and includes a built-in gate protection diode. It is housed in the TO-263 package.

Feature Summary

  • Super low on-state resistance for efficient high-current switching
  • Low input capacitance to support fast switching speeds
  • Built-in gate protection diode for enhanced reliability

Applications

  • High current switching applications

Procurement Notes

Verify the specific ordering suffix -E1-AZ against official Renesas documentation to confirm exact packaging and compliance status. Ensure the TO-263 package variant matches design requirements. Confirm availability through authorized channels as distribution details vary.

Selection Notes

Select this component for designs requiring robust P-channel switching with minimal conduction losses. The logic-level drive capability allows compatibility with standard control voltages. Verify thermal management needs based on the specified on-resistance values under expected load conditions.

Part Context

This part belongs to the NEC (Renesas) power MOSFET family, specifically engineered for industrial use. It represents a continuation of legacy NEC semiconductor products now managed by Renesas Electronics Corporation, maintaining established performance characteristics for power management solutions.

Replacement Considerations

Check for direct substitutes within the 2SJ605 series such as 2SJ605-S or 2SJ605-ZJ if package variations are acceptable. Verify pinout and electrical parameters match exactly before substitution.

2SJ605-ZJ-E1-AZ2SJ605-ZJ-E1-AZ
$1.71
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