2SJ610(TE16L1,NQ)

Overview

The Toshiba 2SJ610 is a silicon P-channel MOSFET utilizing π-MOSV technology, designed for switching regulator, DC/DC converter, and motor drive applications. It features a drain-source voltage rating of -250 V and a continuous drain current of -2.0 A. The device exhibits a typical drain-source ON-resistance of 1.85 Ω and a forward transfer admittance of 1.8 S. Key electrical characteristics include a gate threshold voltage ranging from -1.5 to -3.5 V and a maximum gate-source voltage of ±20 V. Thermal performance includes a channel-to-case thermal resistance of 6.25 °C/W and a maximum channel temperature of 150 °C.

Feature Summary

• Utilizes π-MOSV technology for enhanced switching performance in power conversion circuits.
• Features low drain-source ON-resistance and high forward transfer admittance for efficient operation.
• Includes internal body diode with defined reverse recovery characteristics for inductive load driving.

Applications

• Switching regulators
• DC/DC converters
• Motor drive applications

Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm package type and environmental compliance status. Confirm availability as distribution channels may vary. Ensure design accounts for absolute maximum ratings, particularly regarding avalanche energy limits and thermal derating curves under heavy loads.

Selection Notes

Select this component for designs requiring high-voltage P-channel switching capabilities up to 250 V. Evaluate the thermal resistance and safe operating area (SOA) to ensure the junction temperature remains within limits during pulsed operations. Consider the gate charge requirements for driver circuit compatibility in high-frequency switching environments.

Part Context

This device belongs to Toshiba's discrete field-effect transistor portfolio, specifically engineered for general electronics and industrial applications. It serves as a high-voltage switching element suitable for replacing older bipolar or standard MOS technologies where lower on-resistance and faster switching speeds are required in compact surface-mount packages.

Replacement Considerations

Consult official Toshiba substitution guides for verified equivalents. Cross-reference pinouts, thermal resistance values, and breakdown voltages carefully when considering alternative manufacturers' parts to ensure functional compatibility without redesigning the PCB layout.

FAQ

What is the maximum single-pulse avalanche energy rating?

The maximum single-pulse avalanche energy (EAS) is rated at 180 mJ under test conditions of VDD = -50 V, initial Tch = 25°C, L = 75 mH, IAR = -2.0 A, and RG = 25 Ω.

Does the device support repetitive avalanche operation?

Yes, the device supports repetitive avalanche energy (EAR) rated at 2.0 mJ, provided the pulse width is limited by the maximum channel temperature constraints.

What is the reverse recovery time of the internal body diode?

The reverse recovery time (trr) is typically 120 ns when tested with IDR = -2.0 A, VGS = 0 V, and dIDR/dt = 100 A/μs.