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Product Detailed Parameters
- Description：MOSFET P-CH 12V SC-96 SOT-23
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：44mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：6.2 nC @ 4 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：630 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SC-96-3, Thin Mini Mold
- Package / Case：SC-96
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Overview
The 2SJ621-T1B-AT is a P-channel MOS field effect transistor manufactured by Renesas Electronics Corporation. It is designed as a switching device capable of being driven directly by a 1.8 V power source. The component features a maximum drain-source voltage of 12 V and a continuous drain current of 3.5 A at ambient temperature. It is housed in a surface mount SC-96-3 package, also described as a Thin Mini Mold, with three pins.
Feature Summary
- P-channel MOSFET architecture optimized for switching applications
- Direct drive capability from low-voltage logic sources such as 1.8 V systems
- Surface-mount construction in a compact thin-type mini-mold package
Applications
- Low-voltage logic level switching circuits
- Power management modules requiring direct 1.8 V control
- Portable electronic devices utilizing surface-mount assembly
Procurement Notes
Verify the specific ordering suffix AT against the manufacturer's official documentation to confirm tape-and-reel packaging configuration. Ensure the part number matches the exact electrical specifications required for the target circuit design before finalizing procurement orders.
Selection Notes
Select this component when a P-channel switch requires direct interfacing with 1.8 V logic signals without additional level shifting. The 12 V rating and 3.5 A current capacity define the operational limits for load handling in compatible low-voltage power distribution paths.
Part Context
This device belongs to the Renesas discrete semiconductor transistor portfolio, specifically within the MOSFET category. Renesas Electronics Corporation acquired NEC Electronics Corporation in 2010, inheriting this product line. The component represents standard quality grade unless otherwise specified in datasheets.
Replacement Considerations
Cross-reference with other P-channel MOSFETs rated for 12 V and 3.5 A in SC-96-3 packages. Verify pinout compatibility and gate threshold voltage characteristics to ensure functional equivalence in existing designs.
