ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：2SJ635 - P-CHANNEL SILICON MOSFE
- Series：-
- Mfr：onsemi
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：60mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：45 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2200 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta), 30W (Tc)
- Operating Temperature：150°C
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TP
- Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
Download product information
Overview
The onsemi 2SJ635-TL-E is a P-channel silicon MOSFET designed for through-hole mounting. It features a 60 V drain-source voltage rating and supports a continuous drain current of 12 A at ambient temperature, with thermal dissipation capabilities of 1 W at ambient and 30 W at case temperatures. The component utilizes a TP package, suitable for general-purpose switching applications requiring robust discrete semiconductor performance in power management circuits.
Feature Summary
- P-channel silicon construction for reliable switching operations
- Through-hole TP package design for secure board mounting
- Rated for 60 V drain-source voltage and 12 A continuous current
Applications
- General-purpose power supply switching
- Low-side load switch implementations
- Battery protection circuits
Procurement Notes
Verify the specific tape-and-reel or tube packaging configuration directly with the manufacturer or authorized distributor, as packaging formats may vary by production batch. Confirm that the device meets all relevant automotive or industrial qualification standards required for your specific end-use application before finalizing procurement.
Selection Notes
Select this component when a through-hole P-channel MOSFET with a 60 V rating is required. Ensure the thermal management design accounts for the 1 W ambient and 30 W case dissipation limits. Verify that the gate drive voltage levels are compatible with the device's threshold characteristics for efficient switching in the target circuit topology.
Part Context
This part belongs to onsemi’s discrete semiconductor portfolio, specifically within the single FET and MOSFET category. It serves as a fundamental building block for power electronics, offering a balance of voltage handling and current capacity in a traditional through-hole form factor suitable for prototyping and high-reliability assemblies.
Replacement Considerations
Consult official cross-reference data for direct substitutes. Ensure any replacement maintains identical pinout, voltage ratings, and package dimensions to guarantee compatibility without redesigning the printed circuit board layout.
