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Product Detailed Parameters
- Description：PCH 4V DRIVE SERIES
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The 2SJ637 is a P-Channel Silicon MOSFET designed for DC/DC converter applications. It features a low ON-resistance and ultrahigh-speed switching capability with a 4V drive voltage. The device operates with a drain-to-source voltage of -100 V, a continuous drain current of -5 A, and a pulse drain current of -20 A. Key electrical characteristics include a maximum static on-state resistance of 450 mΩ at VGS=-4 V and a total gate charge of 20 nC.
Feature Summary
- Low ON-resistance for efficient power handling
- Ultrahigh-speed switching performance
- Compatible with 4V logic drive levels
Applications
- DC/DC Converter Applications
Procurement Notes
Verify the specific ordering suffix to confirm package type and tape/reel specifications. Confirm RoHS compliance status and material composition details through official documentation before procurement. Ensure the selected variant matches the required thermal and mechanical constraints for the target assembly process.
Selection Notes
Select this component for designs requiring fast switching speeds and low conduction losses in P-channel configurations. Evaluate the thermal dissipation requirements against the allowable power dissipation curves. Verify that the gate drive voltage meets the minimum threshold for optimal RDS(on) performance.
Part Context
This part belongs to the P-Channel Silicon MOSFET category from onsemi. It is engineered specifically for high-efficiency power conversion circuits where rapid switching transitions are critical. The device utilizes silicon technology to deliver reliable performance in compact surface-mount packages.
Replacement Considerations
Consult official substitution guides for verified alternatives. Cross-reference pinouts, voltage ratings, and thermal characteristics when evaluating potential replacement components.
