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Product Detailed Parameters
- Description：PCH 4V DRIVE SERIES
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The onsemi 2SJ646-E is a P-Channel MOSFET designed for 4V drive applications. It features a Drain-to-Source Breakdown Voltage (V(BR)DSS) of -30 V at ID=-1 mA and VGS=0 V. The device supports a Zero-Gate Voltage Drain Current (IDSS) measured at VDS=-30 V with VGS=0 V. This component is categorized under Single FETs and MOSFTs, suitable for switching circuits and power management tasks requiring reliable performance in low-voltage drive environments.
Feature Summary
- Designed specifically for 4V drive series applications
- P-Channel MOSFET configuration for switching circuits
- Suitable for power management systems
Applications
- Switching circuits
- Power management systems
- Low voltage drive applications
Procurement Notes
Verify the specific suffix (e.g., -TL-E) against the datasheet to confirm packaging and tape-and-reel specifications. Ensure the part number matches the exact electrical characteristics required for your 4V drive design. Cross-reference with official onsemi documentation to avoid counterfeit components. Confirm availability through authorized distributors only.
Selection Notes
Select this component when a P-Channel MOSFET with -30 V breakdown voltage is required for 4V logic-level driving. Consider the thermal dissipation capabilities if operating near maximum current limits. Verify that the package type meets the PCB layout constraints. Ensure compatibility with the control circuit's gate drive voltage levels.
Part Context
This part belongs to onsemi's portfolio of single FETs and MOSFETs. It is part of the broader Intelligent Power and Sensing Technologies lineup, which includes solutions for industrial, automotive, and consumer electronics. The product falls under the category of discrete power devices, supporting mission-critical power systems.
Replacement Considerations
Check for equivalent P-Channel MOSFETs with similar -30 V V(BR)DSS and 4V drive compatibility. Verify pinout compatibility before substitution. Review thermal resistance and on-state resistance differences to ensure system performance remains within specifications.
