2SJ649-AZ

2SJ649-AZ

  • Description:MOSFET P-CH 60V 20A TO220
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk

SKU:8eaabbcc176a Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:MOSFET P-CH 60V 20A TO220
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4V, 10V
  • Rds On (Max) @ Id, Vgs:48mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:38 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1900 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):2W (Ta), 25W (Tc)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220 Isolated Tab
  • Package / Case:TO-220-3 Isolated Tab

Download product information

2SJ649-AZ

Overview

The 2SJ649-AZ is a P-channel single power MOSFET manufactured by Renesas Electronics Corporation. It features a drain-source voltage rating of 60 volts and supports a continuous drain current of 20 amperes. The device exhibits an on-resistance of 48 milliohms. Power dissipation capabilities range from 2 to 25 watts depending on thermal conditions, with a maximum junction temperature of 150 degrees Celsius. It is housed in a TO-220 package with an isolated tab.

Feature Summary

  • P-channel enhancement mode construction for efficient switching applications
  • Low on-resistance characteristic enabling high current handling capability
  • Robust thermal design with isolated tab for effective heat dissipation

Applications

  • DC-DC converter circuits
  • Motor driver interfaces
  • Power supply load switches

Procurement Notes

Verify component authenticity through authorized channels as the part is marked obsolete. Confirm package integrity and pin configuration compatibility before integration. Check for available substitute components such as IXTP28P065T if production continuity is required. Ensure storage conditions meet moisture sensitivity levels specified in the datasheet.

Selection Notes

Select this component for applications requiring a 60-volt P-channel switch with 20-ampere capacity. Evaluate thermal management requirements given the 2-watt to 25-watt dissipation range. Compare on-resistance values against system efficiency targets. Verify that the TO-220 isolated tab package fits the mechanical constraints of the target PCB layout.

Part Context

This device belongs to the Renesas 2SJ649 series of single power MOSFETs. It is designed for general-purpose power switching tasks where moderate voltage and high current are needed. The series utilizes MP-45F technology for optimized performance characteristics.

Replacement Considerations

The IXTP28P065T is listed as a similar available substitute. Verify electrical parameters and pinout compatibility before substitution.

FAQ

What is the maximum junction temperature for the 2SJ649-AZ?

The maximum junction temperature is 150 degrees Celsius.

Is the 2SJ649-AZ currently in production?

No, the component is classified as obsolete and no longer manufactured.

2SJ649-AZ2SJ649-AZ

Click on the inquiry