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The 2SJ649-AZ is a P-channel single power MOSFET manufactured by Renesas Electronics Corporation. It features a drain-source voltage rating of 60 volts and supports a continuous drain current of 20 amperes. The device exhibits an on-resistance of 48 milliohms. Power dissipation capabilities range from 2 to 25 watts depending on thermal conditions, with a maximum junction temperature of 150 degrees Celsius. It is housed in a TO-220 package with an isolated tab.
Verify component authenticity through authorized channels as the part is marked obsolete. Confirm package integrity and pin configuration compatibility before integration. Check for available substitute components such as IXTP28P065T if production continuity is required. Ensure storage conditions meet moisture sensitivity levels specified in the datasheet.
Select this component for applications requiring a 60-volt P-channel switch with 20-ampere capacity. Evaluate thermal management requirements given the 2-watt to 25-watt dissipation range. Compare on-resistance values against system efficiency targets. Verify that the TO-220 isolated tab package fits the mechanical constraints of the target PCB layout.
This device belongs to the Renesas 2SJ649 series of single power MOSFETs. It is designed for general-purpose power switching tasks where moderate voltage and high current are needed. The series utilizes MP-45F technology for optimized performance characteristics.
The IXTP28P065T is listed as a similar available substitute. Verify electrical parameters and pinout compatibility before substitution.
The maximum junction temperature is 150 degrees Celsius.
No, the component is classified as obsolete and no longer manufactured.