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Product Detailed Parameters
- Description：PCH 4V DRIVE SERIES
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The onsemi 2SJ651-TH is a P-channel MOSFET designed for through-hole mounting in the TO-220ML package. It features a 60V drain-source voltage rating and supports a continuous drain current of 20A at ambient temperature. The device exhibits a low on-resistance of 60mOhm when driven at 10V with a 10A load, ensuring efficient power handling. Thermal performance is rated at 2W dissipation at ambient temperature and 25W at case temperature, making it suitable for robust industrial and commercial power switching applications requiring reliable single FET operation.
Feature Summary
- P-channel configuration optimized for 4V drive series compatibility
- Through-hole TO-220ML packaging for secure mechanical attachment
- Low on-resistance characteristics for efficient power management
Applications
- Industrial motor drivers
- Power supply circuits
- General purpose switching applications
Procurement Notes
Verify the specific suffix TH against the official datasheet to confirm pinout and thermal specifications. Ensure the selected component matches the required 60V and 20A ratings for your circuit design. Cross-reference the TO-220ML package dimensions with your PCB layout constraints. Confirm that the 4V drive series requirement aligns with your logic interface voltages before finalizing procurement.
Selection Notes
Select this component when a P-channel MOSFET with through-hole mounting is required for moderate power applications. The 60V rating suits standard low-voltage systems, while the 20A current capacity handles significant loads. Consider the TO-220ML package for ease of manual assembly or heatsink integration. Evaluate the 60mOhm on-resistance to ensure thermal management meets system efficiency goals under expected operating currents.
Part Context
This part belongs to onsemi's discrete semiconductor portfolio, specifically within the single FET and MOSFET category. It complements their broader range of intelligent power solutions used in industrial automation and energy infrastructure. The device leverages onsemi's expertise in silicon carbide and silicon-based power technologies to deliver reliable performance for mission-critical systems.
Replacement Considerations
Check for direct substitutes like the 2SJ653-CB11-ON if array configurations are needed, though this is an N-channel variant. Verify equivalent P-channel devices from other manufacturers with matching 60V/20A/TO-220ML specifications. Ensure any replacement maintains the same 4V drive compatibility and thermal resistance characteristics.
