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Product Detailed Parameters
- Description：MOSFET P-CH 60V 28A TO220ML
- Series：-
- Mfr：onsemi
- Package：Tube
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：28A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：38mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：80 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4360 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220ML
- Package / Case：TO-220-3 Full Pack
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Overview
The onsemi 2SJ652-RA11 is a P-channel power MOSFET designed for high-voltage switching applications. It features a 60V drain-source breakdown voltage and supports a continuous drain current of 28A at ambient temperature. The device utilizes a TO-220ML package with through-hole mounting, offering a low on-resistance of 28.5 mΩ. Key electrical characteristics include a gate-source voltage rating of ±20V, a total gate charge of 80nC, and a maximum power dissipation of 30W. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- P-channel enhancement mode construction for efficient switching control
- Low on-resistance design to minimize conduction losses
- Robust thermal performance suitable for through-hole mounting
Applications
- High-voltage power switching circuits
- DC-DC converter topologies
- Motor drive interfaces
Procurement Notes
Verify the specific suffix RA11 against official datasheets to confirm package type and tape-and-reel specifications. Confirm lifecycle status as components may be subject to obsolescence. Ensure compatibility with existing PCB footprints for the TO-220ML form factor before integration into production designs.
Selection Notes
Select this component when a P-channel MOSFET with 60V capability and 28A continuous current handling is required in a through-hole package. Consider the 28.5 mΩ on-resistance for efficiency requirements and verify that the 30W power dissipation rating meets the thermal management constraints of the target application environment.
Part Context
This part belongs to the 2SJ652 series of P-channel power MOSFETs manufactured by onsemi. The series is characterized by silicon technology and is intended for general-purpose power switching. The RA11 suffix typically denotes specific packaging or reel configurations compared to other variants like the 1E.
Replacement Considerations
Check for direct substitutes such as the 2SJ652-1E, ensuring pinout and electrical parameters match. Verify that any alternative maintains the same TO-220ML package dimensions and thermal characteristics.
