ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET P-CH 60V 28A TO220ML
- Series：-
- Mfr：onsemi
- Package：Bag
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：28A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：38mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：80 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4360 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta), 30W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220ML
- Package / Case：TO-220-3 Full Pack
Download product information
Overview
The onsemi 2SJ652 is a P-Channel enhancement mode MOSFET designed for through-hole mounting in TO-220-3 packages. It features a drain-source breakdown voltage of 60 V and supports continuous drain currents up to 28 A. The device exhibits a low on-resistance of 28.5 mOhms, facilitating efficient power switching with minimal conduction losses. Gate-source voltage limits are rated at ±20 V, while total power dissipation reaches 30 W. Operating temperatures span from -55 °C to +150 °C junction temperature, ensuring reliability across diverse industrial environments.
Feature Summary
- P-Channel silicon construction optimized for high-efficiency switching applications
- Low on-resistance design minimizes conduction losses during operation
- Robust thermal performance supporting extended operating temperature ranges
Applications
- Power supply output stages
- Motor control circuits
- Load switching systems
Procurement Notes
Verify component authenticity through authorized distribution channels due to potential obsolescence status. Confirm package integrity upon receipt as the TO-220-3 housing may show handling wear. Ensure storage conditions maintain moisture sensitivity levels before soldering. Cross-reference datasheet revisions to confirm pinout consistency with existing designs.
Selection Notes
Evaluate thermal management requirements carefully given the 30 W power dissipation rating in a single-channel configuration. Consider gate charge characteristics for driving circuit compatibility. Verify that system voltages remain within the 60 V breakdown limit under all transient conditions. Assess current demands against the 28 A continuous rating to prevent overheating.
Part Context
This component belongs to the 2SJ652 series of P-Channel MOSFETs manufactured by onsemi. It utilizes standard silicon technology for general-purpose power switching. The TO-220-3 package provides mechanical stability and heat dissipation capabilities suitable for board-level mounting. It serves as a discrete solution for medium-power electronic applications requiring reliable p-type channel control.
Replacement Considerations
Check for direct substitutes within the same manufacturer family or equivalent specifications from other vendors. Ensure replacement parts match the TO-220-3 footprint and pin configuration. Verify that electrical parameters such as voltage ratings and on-resistance meet or exceed original requirements.
