2SJ659-E

2SJ659-E

$1.12
  • Description:PCH 4V DRIVE SERIES
  • Series:*
  • Mfr:onsemi
  • Package:Bulk

SKU:25caf0317b8c Category: Brand:

  
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Product Detailed Parameters

  • Description:PCH 4V DRIVE SERIES
  • Series:*
  • Mfr:onsemi
  • Package:Bulk
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

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2SJ659-E

Overview

The onsemi 2SJ659-E is a P-Channel Silicon MOSFET designed as a general-purpose switching device. It belongs to the 4V Drive Series, indicating optimized gate threshold characteristics for low-voltage logic control applications. The component utilizes silicon technology to provide reliable performance in power switching circuits.

Feature Summary

  • P-Channel silicon construction
  • General-purpose switching capability
  • Optimized for 4V drive logic levels

Applications

  • General-purpose power switching
  • Low-voltage logic interface circuits

Procurement Notes

Verify the manufacturer origin carefully, as this part number originates from Sanyo Semicon Device and has been acquired by onsemi. Confirm that the specific suffix '-E' matches the required revision or tape-and-reel specification for your production line. Ensure datasheet alignment with current onsemi documentation standards.

Selection Notes

Select this component for designs requiring P-channel switching controlled by low-voltage logic signals. Evaluate the thermal requirements and package constraints against the system's power dissipation needs. Compare electrical parameters such as on-resistance and gate charge with alternative devices if higher efficiency is required.

Part Context

This device is part of the broader portfolio of discrete power semiconductors offered by onsemi. It falls under the category of single FETs and MOSFTs, serving as a fundamental building block for power management and signal switching applications across industrial and consumer electronics sectors.

Replacement Considerations

Check for direct equivalents within the same 4V Drive series. Verify pinout compatibility and electrical specifications before substituting with other P-channel MOSFETs from different manufacturers.

2SJ659-E2SJ659-E
$1.12
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