2SJ660-DL-E

2SJ660-DL-E

$1.30
  • Description:PCH 4V DRIVE SERIES
  • Series:*
  • Mfr:onsemi
  • Package:Bulk

SKU:b2caa143bddd Category: Brand:

  
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Product Detailed Parameters

  • Description:PCH 4V DRIVE SERIES
  • Series:*
  • Mfr:onsemi
  • Package:Bulk
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

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2SJ660-DL-E

Overview

The onsemi 2SJ660-DL-E is a P-channel MOSFET belonging to the 4V Drive Series. It is designed for low-voltage applications requiring efficient power switching with minimal gate drive requirements. The component features a single FET configuration optimized for modern digital logic interfaces.

Feature Summary

  • Optimized for 4V drive series compatibility
  • P-channel MOSFET architecture
  • Single FET discrete semiconductor design

Applications

  • Low voltage power switching circuits
  • Digital logic interface power management
  • Battery-powered device power stages

Procurement Notes

Verify the exact datasheet revision and electrical characteristics directly from onsemi official documentation before integration. Confirm package type and marking codes match project specifications. Ensure supply chain authenticity through authorized distributors to avoid counterfeit components.

Selection Notes

Select this component when system requirements align with the 4V Drive Series specifications. Evaluate thermal performance and gate charge parameters against specific load conditions. Compare alternative P-channel options within the same series for pin compatibility and cost efficiency.

Part Context

This part belongs to onsemi's portfolio of intelligent power and sensing technologies, specifically within the MOSFET category. The 4V Drive Series targets applications demanding high reliability and scalability for mission-critical power systems in industrial and consumer electronics sectors.

Replacement Considerations

Check onsemi documentation for direct cross-reference parts within the 2SJ66x-DL-E family. Verify pinout and electrical limits before substituting with other P-channel MOSFETs.

2SJ660-DL-E2SJ660-DL-E
$1.30
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