2SJ661-1EX

2SJ661-1EX

  • Description:MOSFET P-CH I2PAK
  • Series:-
  • Mfr:onsemi
  • Package:Tube

SKU:4f9ca518be96 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET P-CH I2PAK
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:38A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On):4V, 10V
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

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2SJ661-1EX

Overview

The onsemi 2SJ661-1EX is a P-Channel Power MOSFET designed for general-purpose switching applications. It features a drain-source voltage rating of -60V and a continuous drain current capacity of -38A. The device exhibits a maximum on-resistance (Rds(on)) of 39mΩ at specified gate-source voltages. It is housed in a D2PAK (TO-263) surface-mount package, providing robust thermal performance and reliability for power management circuits requiring efficient high-current switching capabilities.

Feature Summary

  • P-Channel configuration optimized for low-side or high-side switching topologies
  • Low on-resistance characteristic to minimize conduction losses
  • Robust packaging suitable for automated surface-mount assembly

Applications

  • General-purpose switching devices
  • Industrial motor drive systems
  • Power supply output stages

Procurement Notes

Verify the specific suffix '1EX' against the manufacturer's official datasheet to confirm the exact pinout and mechanical dimensions associated with the D2PAK variant. Ensure compatibility with your PCB footprint design. Cross-reference the part number with authorized distributors to guarantee authenticity and traceability. Confirm that the component meets all relevant environmental and safety standards required for your final product integration.

Selection Notes

Select this component when a P-Channel MOSFET with -60V breakdown and approximately -38A current handling is required. Evaluate the thermal resistance characteristics of the D2PAK package against your system's heat dissipation constraints. Compare the Rds(on) specifications with alternative N-Channel solutions if synchronous rectification is feasible. Ensure the gate drive voltage levels are compatible with the specified thresholds for optimal switching performance.

Part Context

This component belongs to onsemi's portfolio of discrete power semiconductors. It is part of the broader family of P-Channel MOSFETs utilized in industrial and consumer electronics. The 2SJ661 series is engineered to provide reliable performance in environments demanding efficient power conversion and switching. It supports onsemi's focus on intelligent power technologies for various market segments.

Replacement Considerations

Consult official substitution guides for equivalent P-Channel MOSFETs with matching voltage and current ratings. Verify pin compatibility before replacing. No direct substitute part numbers are confirmed in the provided source material.

2SJ661-1EX2SJ661-1EX

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