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Product Detailed Parameters
- Description：MOSFET P-CH 60V 5A PW-MOLD2
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：170mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：15 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：700 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：20W (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：PW-MOLD2
- Package / Case：TO-251-3 Stub Leads, IPAK
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Overview
The Toshiba Semiconductor and Storage 2SJ681 is a silicon P-channel MOS field-effect transistor utilizing U-MOSIII technology. It features a drain-source voltage rating of -60 V and supports continuous DC drain currents up to -5 A, with peak pulse capabilities reaching -20 A. The device offers low on-resistance, typically 0.12 Ω at a gate-source voltage of -10 V, and high forward transfer admittance of 5.0 S. Designed for efficient switching, it operates with a 4-V gate drive threshold and includes robust thermal characteristics suitable for power management applications.
Feature Summary
- Utilizes U-MOSIII technology for enhanced performance
- Features low drain-source ON-resistance for efficiency
- Supports 4-V gate drive operation
- Provides high forward transfer admittance
Applications
- Relay Drive
- DC-DC Converter
- Motor Drive
Procurement Notes
Verify the specific ordering suffix and environmental compliance status directly with Toshiba Semiconductor and Storage representatives before procurement. Confirm RoHS compatibility details as they may vary by production batch. Ensure that the final component selection aligns with the absolute maximum ratings and derating concepts outlined in the official Toshiba Semiconductor Reliability Handbook to maintain system integrity.
Selection Notes
Select this component based on its specific P-channel configuration and U-MOSIII architecture. Evaluate the thermal resistance from channel to case (6.25 °C/W) against your heat dissipation requirements. Consider the gate threshold voltage range (-0.8 to -2.0 V) when designing the control circuitry to ensure reliable enhancement mode operation under varying temperature conditions.
Part Context
This part belongs to the family of silicon P-channel MOSFETs manufactured using Toshiba's proprietary U-MOSIII process technology. It is engineered specifically for power switching applications requiring low on-resistance and fast switching speeds. The device is housed in a standard surface-mount package designed for efficient thermal management and integration into compact electronic designs.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Toshiba Semiconductor and Storage sales representatives for potential cross-references or updated product line replacements.
