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Product Detailed Parameters
- Description：SMALL SIGNAL N-CHANNEL MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SJ687-ZK-E2-AY is a P-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a maximum drain-source voltage (VDSS) of -20V and a continuous drain current (ID) of -20A. The device offers low on-state resistance, with RDS(on) specified at 7.0 mΩ maximum when VGS is -4.5V and ID is -10A. It supports avalanche capability ratings and is designed for efficient switching applications driven by low power-supply voltages. The component is housed in a TO-252 / DPAK package.
Feature Summary
- Low on-state resistance optimized for high-efficiency switching
- Capable of being driven by low power-supply voltages
- Includes avalanche capability ratings for robust operation
Applications
- Industrial power switching circuits
- Low voltage drive applications requiring P-channel control
- Automotive electronic systems
Procurement Notes
Verify the specific ordering suffix against official Renesas documentation to confirm package type and lead-free status. Confirm that the E2 variant matches the required industrial qualification level. Ensure compatibility with recommended mounting pad layouts provided in Renesas application notes for optimal thermal performance.
Selection Notes
Select this component for designs requiring a -20V P-channel MOSFET with high current handling capabilities. Consider the 7mΩ RDS(on) specification for minimizing conduction losses in low-voltage applications. Verify that the TO-252 package dimensions fit the target PCB layout constraints.
Part Context
This part belongs to the Renesas 2SJ687 series of P-channel power MOSFETs. It is an industrial-grade device designed for general-purpose power switching. The series emphasizes low on-resistance and avalanche ruggedness, making it suitable for demanding environments where reliability under transient conditions is critical.
Replacement Considerations
Check for direct pin-compatible substitutes within the Renesas portfolio that share the same VDSS and ID ratings. Verify that any alternative device meets the same RDS(on) specifications and package requirements.
