2SJ690-T1B-AT

Description：MOSFET P-CH 30V 2.5A SC96-3
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)

SKU:bf1cd13d6087 Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 2.5A SC96-3
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：119mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：5.2 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：450 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：200mW (Ta)
Operating Temperature：150°C
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SC-96-3, Thin Mini Mold
Package / Case：SC-96

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2SJ690-T1B-AT

Overview

The Renesas 2SJ690-T1B-AT is a P-channel MOSFET designed for power switching applications. It features a maximum drain-to-source voltage of -30 V and a continuous drain current of -2.5 A. The device supports 2.5 V drive capability with an on-state resistance of 217 mΩ MAX at VGS = -2.5 V, ID = -1.0 A. It includes a built-in gate protection diode and operates within a channel temperature range up to 150 °C.

Feature Summary

Supports low-voltage 2.5 V drive operation
Features low on-state resistance for efficient power switching
Includes integrated gate protection diode

Applications

Power switching in portable machines
General-purpose electronic equipment
Industrial robots

Procurement Notes

Verify the specific ordering suffixes '-T1B' and '-AT' against the latest manufacturer documentation to confirm unit orientation and lead-free status. Confirm the product quality grade matches your application requirements before procurement.

Selection Notes

Select this component based on its -30 V rating and -2.5 A continuous current capacity. Ensure the design accommodates the specified on-state resistance values at both -4.5 V and -2.5 V gate drive voltages to meet efficiency targets.

Part Context

This part belongs to the 2SJ690 series of P-channel MOSFETs manufactured by Renesas Electronics Corporation. It utilizes the SC-96 (Mini Mold Thin Type) package and is intended for standard quality grade applications as defined by the manufacturer.

Replacement Considerations

Consult official cross-reference lists or contact Renesas Electronics sales offices for verified substitute part numbers. Do not assume compatibility without verifying electrical parameters and pin configurations.

FAQ

What is the purpose of the built-in gate protection diode?

It serves as a protector against electrostatic discharge (ESD). An additional external protection circuit may be required if voltages exceeding the rated voltage are applied.