2SK06620RL

Overview

The Panasonic 2SK0662 is a silicon N-channel junction FET designed for low-frequency and low-noise amplification. It features high mutual conductance and operates within a drain-source voltage of 30 V and a maximum power dissipation of 150 mW at 25°C. The device supports a drain current up to 20 mA and exhibits a typical mutual conductance of 4 mS at 1 kHz. Electrical characteristics include a short-circuit forward transfer capacitance of 14 pF and a reverse transfer capacitance of 3.5 pF. Noise performance is specified with a noise voltage of 60 mV under defined conditions. The component is housed in an SMini3-G1 package, facilitating downsizing and automated insertion.

Feature Summary

• Engineered for low-frequency and low-noise amplification applications
• Features high mutual conductance for effective signal processing
• Utilizes an SMini type package to enable equipment downsizing and automatic tape/magazine insertion

Applications

• Low-frequency amplification circuits
• Low-noise signal processing systems
• General electronic equipment such as measuring instruments and communications equipment

Procurement Notes

Verify the specific lifecycle status before procurement, as the datasheet indicates maintenance or discontinuation stages. Confirm that the required IDSS rank (P, Q, or R) matches the design specifications. Ensure compliance with RoHS directives and standard application guidelines. Consult official sales channels for the most recent product standards and availability information prior to finalizing orders.

Selection Notes

Select the appropriate IDSS rank based on the required drain-source current range: Rank P for 0.5 to 3.0 mA, Rank Q for 2.0 to 6.0 mA, and Rank R for 4.0 to 12.0 mA. Ensure the operating environment remains within the guaranteed temperature ranges to maintain electrical stability. Consider the 150 mW power dissipation limit when designing thermal management solutions for the circuit.

Part Context

The 2SK0662 belongs to Panasonic's Silicon Junction FETs (Small Signal) series, specifically optimized for low-frequency and low-noise amplification tasks. It serves as a specialized discrete semiconductor component for general-purpose electronic equipment, distinguishing itself through its high mutual conductance and compact SMini packaging compared to standard small-signal transistors.

Replacement Considerations

No direct public substitute part numbers are documented in the provided datasheet. Designers should evaluate alternative N-channel junction FETs with comparable 30 V ratings, similar mutual conductance, and compatible SMini or equivalent small-outline packages to ensure functional equivalence.