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Product Detailed Parameters
- Description：N-CHANNEL JUNCTION SILICON FET
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：-
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The onsemi 2SK1069-4-TL-E is an N-channel junction silicon FET designed for low-frequency general-purpose amplifier applications. It utilizes the FBET process and features an ultrasmall MCP package with dimensions of 2.1 x 1.25 x 0.425 mm. The device supports a maximum drain-to-source voltage (V_DSS) of 20 V and a continuous drain current (I_D) of 150 mA. Key electrical characteristics include a gate leakage current of 1 nA or less at -4 V, a typical noise figure of 1.5 dB at 1 kHz, and a transition frequency of 40 MHz. Maximum power dissipation is rated at 150 mW.
Feature Summary
- Adoption of FBET process technology
- Ultrasmall-sized package permitting smaller and slimmer designs
Applications
- Low-frequency general-purpose amplifiers
- Variable resistors
- Analog switches
- Constant-current circuits
Procurement Notes
Verify the specific ordering suffix to confirm the exact binning classification for IDSS parameters. Confirm that the MCP package variant matches the design requirements, as the datasheet notes the 2SK771 should be used for CP package versions. Ensure compliance with RoHS directives and check for any REACH material declaration updates before finalizing procurement.
Selection Notes
Select this component for low-frequency analog signal processing where minimal footprint is critical. Consider the IDSS ranking (3, 4, 5) when designing constant-current circuits to ensure proper biasing. Verify thermal management capabilities given the 150 mW power dissipation limit in the small MCP package. Evaluate the 40 MHz transition frequency against application bandwidth needs.
Part Context
The 2SK1069 series consists of N-channel JFETs manufactured by onsemi (formerly SCILLC/SANYO). The -TL-E suffix typically indicates tape and reel packaging with environmental compliance. This part belongs to a family of ultrasmall transistors designed for portable consumer electronics requiring high reliability in compact form factors.
Replacement Considerations
For CP package requirements, use the 2SK771 instead. Direct cross-replacement within the MCP package format requires matching IDSS bins and electrical characteristics. Verify pinout compatibility and thermal resistance specifications before substituting with other N-channel JFETs.
