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Product Detailed Parameters
- Description：JFET N-CH 22V 50MA 3MPAK
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：22 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：12 mA @ 5 V
- Current Drain (Id) - Max：50 mA
- Voltage - Cutoff (VGS off) @ Id：0 V @ 10 µA
- Input Capacitance (Ciss) (Max) @ Vds：9pF @ 5V
- Resistance - RDS(On)：-
- Power - Max：150 mW
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：3-MPAK
- Grade：-
- Qualification：-
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Overview
The 2SK1070PIETL-E is a silicon N-channel Junction FET from Renesas Electronics, packaged in the MPAK (PLSP0003ZB-A) form factor. It operates with a drain current of 50 mA and channel power dissipation of 150 mW at 25°C. The device features a gate-to-source breakdown voltage of -22 V and a forward transfer admittance of 20 to 30 mS at 1 kHz. Input capacitance is typically 9 pF at 1 MHz. The 'E' suffix designates the Grade E binning for Drain Current (IDSS), which ranges from 27 to 40 mA.
Feature Summary
- Designed for low frequency and high frequency amplifier applications
- Features integrated thermal characteristics for reliable operation up to 150 °C channel temperature
- Provides stable amplification with defined forward transfer admittance across operating conditions
Applications
- Low frequency amplifier circuits
- High frequency amplifier circuits
Procurement Notes
Verify the specific ordering suffix against the official datasheet to confirm the correct IDSS grading bin. Confirm that the MPAK package code PLSP0003ZB-A matches the required footprint. Check production status directly with Renesas sales offices as availability may vary by grade.
Selection Notes
Select this component based on the required IDSS range; the 'E' suffix corresponds to the 27 to 40 mA bin. Ensure the circuit design accommodates the -22 V gate-to-source breakdown voltage limit. Verify that the MPAK package dimensions align with the PCB layout requirements.
Part Context
This part belongs to the 2SK1070 series of silicon N-channel Junction FETs manufactured by Renesas Electronics. The series includes multiple grading bins differentiated by ordering suffixes, such as C, D, and E, which define specific Drain Current (IDSS) ranges for consistent performance in amplifier designs.
Replacement Considerations
Consult the datasheet's ordering information for alternative grades within the same series, specifically 2SK1070PICTL-E or 2SK1070PIDTL-E, which share the same package but differ in IDSS specifications.
