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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The 2SK1283(1)-AZ is an N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a maximum drain-source voltage of 60V and a continuous drain current of 3A. The device exhibits a maximum on-resistance of 180 milliohms at a gate-source voltage of 10V. It utilizes an MP-5 package type for through-hole mounting. The component is designed for switching applications in solenoid, motor, and lamp drivers.
Feature Summary
- N-channel silicon power MOSFET construction
- Designed for high-speed switching operations
- Low on-resistance characteristics for efficient power handling
- Through-hole MP-5 package configuration
Applications
- Solenoid driver circuits
- Motor control systems
- Lamp driver applications
- Computer peripheral interfaces
- Communication equipment power stages
Procurement Notes
Verify the specific suffix designation to ensure compatibility with required lead-free or RoHS compliance standards. Confirm that the MP-5 package dimensions align with the target PCB footprint. Check datasheet revisions for any updates to thermal resistance values or absolute maximum ratings before finalizing the design integration.
Selection Notes
Select this component when a 60V rating and 3A continuous current capacity are sufficient for the load requirements. Consider the 180 milliohm on-resistance for thermal management calculations in low-voltage applications. Ensure the driving circuit can provide adequate gate charge to achieve the specified switching speeds effectively.
Part Context
This part belongs to the single FET discrete semiconductor category within Renesas's MOSFET portfolio. It serves as a replacement for older NEC Corporation designs, maintaining functional equivalence for industrial and commercial equipment. The component supports standard through-hole assembly processes commonly used in legacy and robust electronic designs.
Replacement Considerations
Direct substitutes may include other N-channel MOSFETs with matching 60V/3A ratings and MP-5 packages. Verify pinout compatibility and thermal performance metrics before substitution. Cross-reference with Renesas official cross-reference lists for guaranteed electrical equivalence.
