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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK1290-AZ is an N-channel silicon power MOSFET manufactured by Renesas Electronics Corporation. It features a TO-220AB (MP-45F) through-hole package with three leads. The device supports a drain current of 25A and a drain-source voltage of 60V. Key electrical parameters include a maximum on-resistance of 45 mΩ at 10V gate drive and 60 mΩ at 4.5V gate drive. It is designed for industrial applications and consumer use, offering high-speed switching capabilities suitable for power management circuits.
Feature Summary
- N-channel silicon construction for robust power switching
- Through-hole mounting for secure mechanical attachment
- Optimized low on-resistance for efficient conduction
Applications
- Industrial power control systems
- Consumer electronics power regulation
- DC-DC converter circuits
Procurement Notes
Verify the specific suffix AZ to confirm lead-free status and packaging type. Ensure compatibility with MP-45F footprint requirements. Confirm industrial qualification level matches system design specifications. Check for RoHS compliance documentation if required by regional regulations. Validate thermal performance data against actual heat sink constraints.
Selection Notes
Select this component when a 60V, 25A N-channel MOSFET in a through-hole package is required. Consider the 45 mΩ RDS(on) at 10V VGS for standard logic-level or dedicated driver applications. Evaluate thermal dissipation needs based on the TO-220AB package limitations. Compare against alternative packages if PCB space allows for surface-mount solutions.
Part Context
This part belongs to Renesas' single FET power MOSFET lineup. It serves as a discrete switching element within larger power electronic assemblies. The device complements other components in motor drive and power supply designs where reliable N-channel switching is essential for system efficiency and stability.
Replacement Considerations
Consult official substitution lists for equivalent 60V, 25A N-channel MOSFETs in TO-220 packages. Verify pinout compatibility before replacing. Ensure thermal resistance characteristics match the original design constraints.
