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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The 2SK1313-01L-E is a silicon N-channel MOS FET manufactured by Renesas Electronics Corporation. It belongs to the 2SK1313 series, which includes variants such as 2SK1313(L), 2SK1313(S), 2SK1314(L), and 2SK1314(S). The device is designed for high-speed power switching applications. Key electrical characteristics include a drain-to-source voltage rating of 650V. The component is available in LDPAK package configurations, specifically PRSS0004AE-A (LDPAK(L)) and PRSS0004AE-B (LDPAK(S)-(1)).
Feature Summary
- Low on-resistance for efficient conduction.
- High speed switching capability.
- Low drive current requirements.
- No secondary breakdown.
Applications
- Switching regulator circuits.
- DC-DC converter systems.
- High speed power switching.
Procurement Notes
Verify the specific suffix against official Renesas documentation to confirm pinout compatibility and thermal performance. Confirm that the LDPAK variant matches the required PCB footprint. Ensure the component meets the necessary voltage ratings for the target application circuit design.
Selection Notes
Select this component for applications requiring high-voltage N-channel MOSFETs with fast switching speeds. Consider the LDPAK package options based on thermal management needs and board space constraints. Verify compatibility with existing gate drive circuits due to low drive current specifications.
Part Context
The 2SK1313-01L-E is part of the Renesas 2SK1313 series of silicon N-channel MOS FETs. This series is engineered for robust performance in power electronics. The device utilizes advanced silicon technology to achieve low on-resistance and high-speed switching characteristics suitable for modern power conversion topologies.
Replacement Considerations
Consult official Renesas substitution guides for verified alternatives. Cross-reference pinouts and electrical parameters carefully when considering equivalent parts from other manufacturers to ensure functional compatibility.
