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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The 2SK1313S-E is a silicon N-channel power MOSFET manufactured by Renesas Electronics. It features a drain-source voltage rating of 650V and a continuous drain current of 7A. The device exhibits a maximum on-resistance of 0.48 ohms at a gate-source voltage of 10V. It operates within a temperature range of -55°C to +150°C and utilizes an LDPAK package.
Feature Summary
- Low on-resistance for efficient power handling
- High-speed switching capability
- Low drive current requirements
- No secondary breakdown
Applications
- High speed power switching
- Switching regulators
- DC-DC converters
Procurement Notes
Verify the specific suffix against official Renesas documentation, as variations may exist. Confirm RoHS compliance status directly with the manufacturer or authorized distributors. Ensure the component matches the required LDPAK package dimensions and pinout configuration for your design integration.
Selection Notes
Select this component for applications requiring high-voltage isolation and fast switching speeds. Consider the thermal performance characteristics relative to the LDPAK package when designing heat dissipation solutions. Verify that the gate threshold voltage aligns with your control circuit logic levels.
Part Context
This part belongs to the Renesas 2SK series of silicon N-channel MOSFETs. These devices are engineered for robust performance in power electronics. The series is known for combining low conduction losses with rapid switching transitions, making it suitable for modern power supply architectures.
Replacement Considerations
Consult official Renesas substitution guides for verified alternatives. Cross-reference electrical parameters such as Vds, Id, and Rds(on) carefully. Package compatibility must be confirmed before implementation.
