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The onsemi 2SK1332-3-TL-E is a P-channel power MOSFET designed for general-purpose switching applications. It features a low ON-resistance and supports 1.8V drive logic, enabling efficient operation in low-voltage systems. The device is housed in a compact surface-mount package, ensuring suitability for space-constrained designs. Key electrical characteristics include a drain-source voltage rating of 20 V and a continuous drain current capacity suitable for moderate load requirements. The component complies with halogen-free standards, supporting environmentally conscious manufacturing processes.
Verify the specific suffix TL-E against official datasheets to confirm pinout and packaging details. Confirm RoHS and halogen-free status through manufacturer declarations. Check for obsolescence notices or lifecycle changes before finalizing procurement plans.
Select this component for applications requiring fast switching speeds and compatibility with 1.8V control signals. Ensure thermal management aligns with the device's power dissipation limits in the chosen package. Compare ON-resistance values against alternative P-channel MOSFETs for optimal efficiency in the target circuit design.
This part belongs to the 2SK series of power MOSFETs from onsemi, historically derived from Sanyo Semiconductor assets. The 2SK1332 variant is specifically optimized for low-voltage, high-speed switching tasks. It serves as a direct replacement for legacy Sanyo parts in existing designs requiring P-channel topology.
Direct substitutes include SCH1332 and SCH1332-TL-H. Verify pin compatibility and electrical ratings when cross-referencing with other P-channel MOSFETs. Ensure that any alternative device meets the 1.8V drive requirement and switching speed specifications.