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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK1335-90L is an N-channel power MOSFET manufactured by Renesas Electronics Corporation. It is designed for high-voltage switching applications, featuring a 900V drain-source voltage rating and a 3A continuous drain current capability. The device utilizes silicon technology and is housed in a TO-3P-3 through-hole package. Key electrical characteristics include a maximum on-resistance of 7000 milliohms. The component is lead-free and RoHS compliant, indicating adherence to environmental standards for electronic materials.
Feature Summary
- High-voltage N-channel power MOSFET construction
- Through-hole TO-3P-3 package for robust mounting
- Lead-free and RoHS compliant manufacturing
Applications
- High-voltage power switching circuits
- Industrial motor control systems
- Power supply unit output stages
Procurement Notes
Verify the specific datasheet version for the 2SK1335-90L to confirm exact thermal resistance values and absolute maximum ratings before integration. Ensure that the procurement source provides official documentation from Renesas Electronics Corporation or authorized distributors. Cross-reference the part number with the manufacturer's latest lifecycle status to confirm availability and long-term supply continuity for production planning.
Selection Notes
Select this component when designing circuits requiring high breakdown voltage and moderate current handling in a through-hole format. The 900V rating makes it suitable for mains-connected or high-inductive load applications. Consider the 7000 milliohm on-resistance for efficiency calculations in low-current scenarios. Evaluate the TO-3P-3 package size against available board space and thermal management requirements compared to surface-mount alternatives.
Part Context
This part belongs to the Renesas power MOSFET family, specifically engineered for discrete power switching roles. It shares the standard naming convention for high-voltage silicon devices within the manufacturer's portfolio. The 2SK series designation indicates its classification as a power transistor, distinct from logic-level or low-voltage signal MOSFETs offered by the same vendor.
Replacement Considerations
Consult the official Renesas replacement guide for direct equivalents. Verify pin compatibility and electrical parameters such as Vds, Id, and Rds(on) when considering substitutes from other manufacturers to ensure circuit functionality remains unchanged.
