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Product Detailed Parameters
- Description：MOSFET N-CH 900V 3A TO3P
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：900 V
- Current - Continuous Drain (Id) @ 25°C：3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：7Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：425 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：80W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3P
- Package / Case：TO-3P-3, SC-65-3
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Overview
The 2SK1339-E is an N-channel power MOSFET manufactured by Renesas Electronics. It features a silicon technology and is housed in a TO-3P-3 through-hole package. The device supports a drain-source voltage of 900V and a continuous drain current of 3A. Its on-resistance is specified at 7000 milliohms. The component is classified as moisture sensitive and complies with RoHS standards.
Feature Summary
- N-channel power MOSFET construction
- Through-hole mounting capability
- High voltage blocking performance
Applications
Procurement Notes
Verify availability status directly with the manufacturer or authorized distributors, as supply conditions may be limited or subject to special order requirements. Confirm that the specific procurement channel provides genuine Renesas Electronics products. Ensure compliance with moisture sensitivity handling protocols during storage and assembly processes to maintain component integrity.
Selection Notes
Select this component for applications requiring high-voltage switching capabilities within a through-hole form factor. Consider the specific on-resistance value for thermal management calculations. Verify that the TO-3P-3 package dimensions fit the target PCB layout constraints. Evaluate the 3A current rating against the maximum load requirements of the intended circuit design.
Part Context
This part belongs to the Renesas Electronics discrete semiconductor portfolio, specifically within the power transistor category. It utilizes standard silicon planar technology designed for robust power switching operations. The TO-3P-3 package provides a standardized mechanical interface for thermal dissipation and electrical connection in industrial and consumer electronic assemblies.
Replacement Considerations
Consult official Renesas documentation for verified substitute part numbers. Cross-reference technical specifications such as voltage ratings, current limits, and package compatibility before implementing any alternative components.
