2SK1340-E

Description：MOSFET N-CH 900V 5A TO3P
Series：-
Mfr：Renesas Electronics Corporation
Package：Tube

SKU:016c0465b697 Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 900V 5A TO3P
Series：-
Mfr：Renesas Electronics Corporation
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：900 V
Current - Continuous Drain (Id) @ 25°C：5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4Ohm @ 3A, 10V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：740 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：100W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-3P
Package / Case：TO-3P-3, SC-65-3

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2SK1340-E

Overview

The 2SK1340-E is a silicon N-channel MOS FET manufactured by Renesas Technology Corp. It provides an output current up to 100 mA and supports output voltages of 3.3, 5, 6, 8, 9, 10, 12, 15, 18, and 24 V. The device includes thermal overload protection and short-circuit protection. No external components are required for operation. It is available in ± 4% (AC) or ± 8% (C) selection options.

Feature Summary

Integrated thermal overload protection
Integrated short-circuit protection
No external components required

Applications

Procurement Notes

Verify the manufacturer designation as Renesas Technology Corp. Confirm the specific voltage selection option (± 4% AC or ± 8% C) required for the application. Ensure compatibility with the specified output voltage levels. Check for any obsolescence notices given the component's age.

Selection Notes

Select based on the required output voltage level among the supported values. Choose the accuracy option (AC or C) according to precision needs. Verify that the 100 mA output current meets the load requirements. Ensure the integrated protections align with system safety specifications.

Part Context

This component is part of the Renesas Technology Corp lineup of silicon N-channel MOS FETs. It is designed for applications requiring regulated output voltages with built-in protection features. The device simplifies design by eliminating the need for external protective components.