ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK1403A-E is an N-channel Power MOSFET manufactured by Renesas Electronics Corporation. It features a maximum drain-source on-resistance of 1.4 ohms and supports a continuous drain current of up to 8 amperes. The device is housed in a TO-3P flange mount package with three through-hole terminals. It operates within a junction temperature range of -55°C to +150°C and has a maximum power dissipation rating of 100 watts.
Feature Summary
- N-channel metal-oxide semiconductor field-effect transistor construction
- Flange mount plastic/epoxy encapsulation for thermal management
- Single configuration with through-hole terminal arrangement
Applications
- Power switching circuits
- Amplifier output stages
- Motor control systems
Procurement Notes
Verify the component status as obsolete or not recommended for new designs, as indicated by related SH-series data. Confirm RoHS compliance status, noting that similar Hitachi/Renesas components may be non-compliant. Ensure the specific suffix matches the required lead frame and marking specifications for your assembly process.
Selection Notes
Select this component when high voltage isolation and robust thermal performance are required. The TO-3P package facilitates direct mounting to heatsinks. Consider the 1.4 ohm on-resistance for efficiency calculations in low-current applications where higher resistance is acceptable.
Part Context
This part belongs to the Renesas (formerly Hitachi) discrete semiconductor lineup. It is classified as a power transistor designed for general-purpose switching and amplification tasks. The manufacturer provides technical documentation detailing absolute maximum ratings and electrical characteristics for design integration.
Replacement Considerations
Check for direct pin-compatible substitutes from the same family. Verify that any replacement maintains the TO-3P package dimensions and electrical parameters such as Rds(on) and Vgs threshold.
