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Product Detailed Parameters
- Description：NCH POWER MOSFET 900V 4A 4000MOH
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：900 V
- Current - Continuous Drain (Id) @ 25°C：4A
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：4Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id：3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：740 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：60W (Tc)
- Operating Temperature：150°C
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：LDPAK
- Package / Case：SC-83
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Overview
The 2SK1528STR-E is a single N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a 900V drain-source voltage rating and a continuous drain current of 4A. The device is housed in an LDPAK(S)-(1) surface-mount package with four leads. Key electrical characteristics include a maximum power dissipation of 60W at case temperature and a typical input capacitance of 740pF. The component is lead-free, complies with RoHS standards, and has a maximum operating temperature of 150°C.
Feature Summary
- High-voltage N-channel power MOSFET design for robust switching applications
- Surface-mount LDPAK(S)-(1) package optimized for thermal performance
- Lead-free construction compliant with environmental directives
Applications
- Industrial equipment power supplies
- Consumer electronics high-voltage circuits
- General-purpose switching applications
Procurement Notes
Verify the specific ordering suffix to ensure compatibility with required packaging formats such as embossed tape. Confirm that the procurement channel provides official documentation from Renesas Electronics Corporation or authorized distributors. Ensure the received components match the specified LDPAK(S)-(1) package and pin configuration. Check for compliance certificates if required for specific regulatory environments.
Selection Notes
Select this component when a 900V blocking capability is required in a compact surface-mount form factor. The 4A current rating suits moderate power switching tasks where space constraints preclude larger packages. Consider the 60W thermal dissipation limit relative to the PCB layout and cooling strategy. Verify that the gate charge and input capacitance values align with the driving circuit requirements for efficient switching.
Part Context
This part belongs to the Renesas 2SK series of discrete semiconductors, specifically power MOSFETs. The manufacturer, Renesas Electronics Corporation, acquired NEC Electronics Corporation in 2010, inheriting this product line. The 2SK1528STR-E represents a standard offering in their portfolio for high-voltage switching applications, utilizing established silicon technology within a standardized surface-mount package.
Replacement Considerations
Direct substitutes must match the 900V rating, 4A current capacity, and LDPAK(S)-(1) package. Verify pinout compatibility before substitution. Cross-reference with other manufacturers' high-voltage N-channel MOSFETs offering similar thermal and electrical specifications.
