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Product Detailed Parameters
- Description：SMALL SIGNAL N-CHANNEL MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK1583-AZ is an N-channel MOS FET designed for switching applications. Manufactured by Renesas Electronics Corporation, this component utilizes metal-oxide semiconductor technology and operates in enhancement mode. It is housed in a TO-243 package and supports surface mount installation. The device is rated for a maximum power dissipation of 2 W and functions at temperatures up to 150 °C. It complies with RoHS standards.
Feature Summary
- N-channel MOS FET configuration optimized for switching operations
- Enhancement mode operation using metal-oxide semiconductor technology
- Surface mount compatible design within the TO-243 package
Applications
- General electronic switching circuits
- Power management systems requiring low voltage operation
Procurement Notes
Verify the specific suffix -AZ against official Renesas documentation to confirm exact electrical tolerances and binning. Ensure the procurement channel provides valid datasheets matching the manufacturer's current specifications. Confirm RoHS compliance status directly from the supplier's declaration. Cross-reference the part number with the latest Renesas product lifecycle notices to ensure availability and obsolescence status before finalizing orders.
Selection Notes
Select this component when an N-channel MOS FET suitable for low-voltage switching is required. The TO-243 package offers a balance between thermal performance and board space efficiency. Consider the 2 W power dissipation limit and 150 °C maximum operating temperature during thermal design. Verify that the application does not exceed the absolute maximum ratings defined in the official datasheet.
Part Context
This component belongs to the Renesas discrete transistor portfolio, specifically within the MOS FET category. It shares the base family characteristics with other devices in the series but is distinguished by its specific packaging and switching parameters. Renesas Electronics Corporation manages the product lifecycle following the merger involving NEC Electronics Corporation.
