2SK1620L-E

$3.89

Description：N-CHANNEL POWER MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk

SKU:7f9cc4c412ae Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：N-CHANNEL POWER MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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2SK1620L-E

Overview

The 2SK1620L-E is a silicon N-channel power MOSFET manufactured by Renesas Electronics. It is designed for high-speed power switching applications, featuring low on-resistance and high speed switching capabilities. The device supports a maximum continuous drain current of 10 A and handles up to 50 W of power dissipation. It operates within a temperature range extending to 150 °C and utilizes an LDPAK surface-mount package with four pins.

Feature Summary

Low on-resistance for efficient conduction
High speed switching capability
Low drive current requirement
No secondary breakdown

Applications

Switching regulators
DC-DC converters
Motor drivers

Procurement Notes

Verify the specific suffix against official Renesas documentation to confirm exact electrical tolerances and packaging variations. Ensure compatibility with RoHS standards if required by your manufacturing process. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before procurement.

Selection Notes

Select this component for designs requiring robust N-channel power switching with moderate current handling. Consider the LDPAK package for surface-mount assembly constraints. Evaluate thermal management requirements given the 50 W power dissipation rating and 150 °C maximum operating temperature limit in your specific circuit layout.

Part Context

This component belongs to the Renesas (formerly NEC Electronics) discrete semiconductor portfolio. It is a silicon-based N-channel MOSFET intended for general-purpose high-speed power switching. The product line emphasizes efficiency and reliability in power conversion and motor control circuits.