2SK1626-E

$1.60

Description：MOSFET N-CH 450V 5A
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk

SKU:dc8e76426215 Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 450V 5A
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

Download product information

2SK1626-E

Overview

The 2SK1626-E is an N-channel MOSFET manufactured by Renesas Electronics Corporation. It features a maximum drain current of 5 A and a breakdown voltage of 450 V. The device utilizes metal-oxide semiconductor technology and is housed in a surface-mount LDPAK(S)-(1) package with four pins. It supports a maximum power dissipation of 50 W and operates at temperatures up to 150 °C. The component is RoHS compliant and designed for single configuration applications.

Feature Summary

High-speed switching capability
Low on-resistance design
No secondary breakdown characteristic

Applications

Switching regulators
DC-DC converters

Procurement Notes

Verify the specific datasheet version directly from Renesas Electronics, as product information may be updated. Confirm that the LDPAK(S)-(1) package matches your PCB footprint requirements. Ensure compliance with RoHS standards if required by your manufacturing process. Cross-reference the part number 2SK1626-E with official Renesas sales offices before finalizing procurement decisions.

Selection Notes

Select this component for applications requiring high-voltage handling up to 450 V with moderate current capacity of 5 A. The low drive current requirement simplifies gate driver selection. Consider the thermal performance within the LDPAK package for heat dissipation needs. Verify compatibility with switching regulator topologies due to its fast switching characteristics.

Part Context

This N-channel MOSFET belongs to Renesas' discrete semiconductor transistor lineup. It is suitable for power management circuits where efficiency and reliability are critical. The device integrates robust switching performance with low conduction losses, making it appropriate for industrial and consumer power supply designs.

Replacement Considerations

Consult official Renesas documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers without electrical parameter validation.