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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK1636STR-E is a single N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a metal-oxide semiconductor structure with four leads in an LDPAK(S)-(1) surface-mount package. The device supports a maximum continuous drain current of 15 A and handles up to 50 W of power dissipation. It operates at temperatures up to 150 °C and has a typical input capacitance of 1250 pF.
Feature Summary
- N-channel metal-oxide semiconductor construction for switching applications
- Surface-mount LDPAK(S)-(1) package design
- Single channel configuration
Applications
- Industrial equipment
- Consumer electronics
Procurement Notes
Verify the component authenticity through official Renesas channels or authorized distributors. Confirm the specific datasheet revision matches your design requirements. Ensure the LDPAK(S)-(1) package footprint aligns with your PCB layout. Check for RoHS compliance status if required by your manufacturing standards. Validate that the 15A current rating suits your thermal management strategy.
Selection Notes
Select this component for designs requiring a single N-channel MOSFET in a compact surface-mount form factor. Consider the 15A drain current capability and 50W power dissipation limits when designing heat sinks. The 150 °C junction temperature rating allows for robust operation in varied environments. Verify input capacitance values for gate drive circuit compatibility.
Part Context
This part belongs to the Renesas power MOSFET portfolio, continuing technology from NEC Electronics Corporation following the 2010 merger. It serves as a discrete semiconductor solution for general-purpose switching tasks. The component is designed for integration into various electronic systems requiring reliable power control.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Renesas technical support for direct equivalents or pin-compatible alternatives.
