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Product Detailed Parameters
- Description：MOSFET N-CH
- Series：*
- Mfr：Sanyo
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The 2SK1736-AZ is a single-element N-channel silicon metal-oxide semiconductor field-effect transistor (MOSFET) manufactured by Sanyo. Designed for very high-speed switching applications, this depletion-mode device features a maximum drain-source breakdown voltage of 100V and a continuous drain current rating of 0.5A. It exhibits a maximum on-resistance of 3.5 ohms. The component is housed in a three-pin SC-71 (SMP3) plastic inline package with rectangular geometry.
Feature Summary
- Optimized for very high-speed switching operations
- Utilizes N-channel silicon MOS technology
- Constructed in a compact three-pin surface-mount package
Applications
- High-speed switching circuits
- Power supply output stages
- Signal processing interfaces
Procurement Notes
Verify the specific suffix AZ against the manufacturer's official documentation to confirm pinout compatibility and electrical tolerances. Ensure the source provides valid traceability for the Sanyo brand. Cross-reference the SC-71 package dimensions with design constraints. Confirm that the depletion mode operation aligns with the circuit requirements before finalizing procurement.
Selection Notes
Select this component when designing circuits requiring fast switching speeds within low-voltage limits. The 100V breakdown voltage suits low-power applications. Verify that the 0.5A current capacity meets load demands. Consider the SC-71 footprint for PCB layout. Ensure the depletion mode characteristic is compatible with the control logic used in the target system design.
Part Context
This part belongs to the Sanyo discrete semiconductor transistor family. It serves as a specialized MOSFET solution for applications demanding rapid transition times. The device complements other small-signal transistors in power management and signal conditioning roles. Its construction focuses on efficiency and speed rather than high-power handling capabilities.
Replacement Considerations
Consult official substitution lists for verified equivalents. Generic replacements may differ in switching speed or gate threshold characteristics. Validate any alternative against the original datasheet specifications to ensure functional parity in high-speed environments.
