2SK1740-5-TB-E

$0.99

Description：N-CHANNEL JUNCTION SILICON FET
Series：*

SKU:a682d60611ee Category: JFETs Brand: Sanyo

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Product introduction

Product Detailed Parameters

Description：N-CHANNEL JUNCTION SILICON FET
Series：*
Mfr：Sanyo
Package：Bulk
FET Type：-
Voltage - Breakdown (V(BR)GSS)：-
Drain to Source Voltage (Vdss)：-
Current - Drain (Idss) @ Vds (Vgs=0)：-
Current Drain (Id) - Max：-
Voltage - Cutoff (VGS off) @ Id：-
Input Capacitance (Ciss) (Max) @ Vds：-
Resistance - RDS(On)：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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2SK1740-5-TB-E

Overview

The 2SK1740-5-TB-E is an N-channel JFET manufactured by Sanyo Semicon Device. It utilizes the FBET process to achieve high performance in a small form factor. Key electrical characteristics include a drain-source voltage of 50V, a gate-source cutoff voltage of -3V, and a forward transfer admittance of 8mS. The device operates with a maximum power dissipation of 200mW and supports junction temperatures up to 150°C.

Feature Summary

Adopts FBET process for enhanced signal handling capabilities
Features large forward transfer admittance for effective amplification
Minimizes input capacitance to support high-frequency applications
Utilizes ultrasmall package design to facilitate compact circuit layouts

Applications

High-frequency amplifier circuits
Low-frequency general-purpose amplifiers
Analog switch applications

Procurement Notes

Verify the manufacturer origin as Sanyo Semicon Device or its successor entities due to corporate restructuring. Confirm the specific ordering suffix matches the required tape-and-reel packaging format. Ensure component authenticity through authorized distribution channels to avoid counterfeit devices affecting circuit reliability.

Selection Notes

Select this component for designs requiring low noise and high gain in limited space. The FBET technology offers distinct advantages over standard MOSFETs for specific analog signal paths. Evaluate thermal constraints carefully given the low power dissipation rating in surface-mount packages.

Part Context

This part belongs to the 2SK1740 series of N-channel JFETs designed for audio and RF applications. The series is characterized by its use in pre-amplifier stages where signal integrity is critical. The specific model variant indicates a particular binning or packaging configuration within the broader product line.