2SK1808-E

$8.50

Description：NCH POWER MOSFET 900V 4A 4000MOH
Series：-
Mfr：Renesas Electronics Corporation
Package：Tray

SKU:7286e79a11c1 Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：NCH POWER MOSFET 900V 4A 4000MOH
Series：-
Mfr：Renesas Electronics Corporation
Package：Tray
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：900 V
Current - Continuous Drain (Id) @ 25°C：4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id：3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：740 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：35W (Tc)
Operating Temperature：150°C
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220FM
Package / Case：TO-220-3 Full Pack

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2SK1808-E

Overview

The 2SK1808-E is a silicon N-channel MOSFET manufactured by Renesas Electronics Corporation. It is designed for high-speed power switching applications, including switching regulators and DC-DC converters. The device features low on-resistance, high-speed switching capabilities, low drive current requirements, and protection against secondary breakdown.

Feature Summary

Low on-resistance
High speed switching
Low drive current
No secondary breakdown

Applications

Switching regulator
DC-DC converter
High speed power switching

Procurement Notes

Verify the specific suffix '-E' against official Renesas documentation to confirm exact electrical tolerances and package variations. Confirm RoHS compliance status and lead-free specifications directly with the manufacturer or authorized distributors before procurement.

Selection Notes

Select this component for designs requiring efficient high-frequency power conversion. Ensure thermal management aligns with the device's power dissipation limits. Verify that the gate drive circuitry supports the specified low drive current requirements for optimal performance.

Part Context

This part belongs to the Renesas silicon N-channel MOSFET portfolio. It is engineered for compact power electronics where efficiency and switching speed are critical. The device serves as a core switching element in modern power supply architectures.

Replacement Considerations

Consult official Renesas cross-reference guides for verified substitutes. Generic equivalents may not match the specific secondary breakdown protection or drive current characteristics.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.