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Product Detailed Parameters
- Description：NCH 4V DRIVE SERIES
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The onsemi 2SK1848-TB-E is an N-channel silicon MOSFET engineered for ultrahigh-speed switching applications. It belongs to the 4V drive series, designed to operate efficiently with low gate drive voltages. The device withstands gate-source voltages down to -5 V, providing robust protection against unwanted turn-on caused by noise or Miller plateau effects. This component is classified as a discrete semiconductor product suitable for RF and high-frequency power management tasks.
Feature Summary
- Ultrahigh-speed switching capability for efficient power conversion
- Optimized for 4V drive series operation
- Enhanced noise immunity with -5 V gate-source voltage tolerance
Applications
- Ultrahigh-speed switching circuits
- RF power management systems
- Low voltage drive applications
Procurement Notes
Verify the specific datasheet version and package details directly from onsemi official documentation before integration. Confirm that the -5 V gate-source rating aligns with your system's noise environment. Ensure compatibility with 4V drive logic levels. Cross-reference part numbers to avoid confusion with similar RF MOSFETs in the portfolio.
Selection Notes
Select this component when ultrahigh-speed switching is required alongside low gate drive voltage constraints. The -5 V gate-source tolerance makes it suitable for environments prone to Miller effect-induced false triggering. Evaluate thermal performance and RF characteristics against specific circuit requirements rather than relying on generic family data.
Part Context
This device is part of onsemi's discrete semiconductor portfolio, specifically within the N-channel MOSFET category. It is categorized under RF FETs and high-speed switching devices. The 'TB-E' suffix typically denotes tape-and-reel packaging and environmental compliance, consistent with standard industry labeling practices for surface-mount components.
Replacement Considerations
Consult onsemi official substitution guides for verified alternatives. Generic cross-references may not match the specific 4V drive characteristics or -5 V gate tolerance. Verify pinout and thermal resistance equivalence before replacing.
