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Product Detailed Parameters
- Description：MOSFET N-CH 900V 6A TO3P
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：900 V
- Current - Continuous Drain (Id) @ 25°C：6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3Ohm @ 3A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：980 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：60W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3P
- Package / Case：TO-3P-3, SC-65-3
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Overview
The 2SK1859-E is a silicon N-channel MOSFET manufactured by Renesas Electronics Corporation. It features a drain-source voltage rating of 900 V and a gate-source voltage limit of ±30 V. The device supports a continuous drain current of 6 A at ambient temperature and can dissipate up to 60 W when case-temperature controlled. These electrical characteristics define its operational boundaries for high-voltage switching applications.
Feature Summary
- High breakdown voltage capability suitable for demanding power environments
- Robust thermal dissipation performance under controlled conditions
- Standard through-hole mounting configuration for reliable integration
Applications
- High-voltage power supply circuits
- Industrial motor control systems
- Switching regulators requiring elevated voltage ratings
Procurement Notes
Verify the specific ordering suffix against official Renesas documentation to confirm exact specifications. Confirm package type and pinout compatibility with your design requirements before procurement. Ensure the component meets all relevant environmental standards required for your specific application context.
Selection Notes
Select this component when circuit designs require high voltage isolation capabilities combined with moderate current handling. Evaluate thermal management strategies carefully, as maximum power dissipation depends on case temperature control. Ensure gate drive voltages remain within the specified safe operating area to prevent device failure.
Part Context
This part belongs to the Renesas silicon N-channel MOSFET family, designed for general-purpose power switching. It represents a standard discrete semiconductor solution for managing high-voltage loads in electronic systems where reliability and defined electrical limits are critical for system stability.
Replacement Considerations
Consult official substitution lists for verified equivalents. Cross-reference key parameters such as voltage ratings, current capacity, and package dimensions to ensure functional compatibility without modifying existing board layouts or thermal solutions.
