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Product Detailed Parameters
- Description：5A, 60V, N-CHANNEL MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK1949L-E is an N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a maximum drain-source voltage of 60V and a continuous drain current rating of 5A. The device utilizes a DPAK(L) surface-mount package, designed for efficient thermal management in compact circuit layouts. As a single FET component, it serves as a fundamental switching element in power electronics applications requiring moderate voltage and current handling capabilities.
Feature Summary
- N-channel enhancement mode construction
- Surface-mount DPAK(L) package design
- Single transistor configuration
Applications
- Automotive high-power system designs
- General-purpose power switching circuits
- DC-DC converter implementations
Procurement Notes
Verify the specific suffix 'E' against official Renesas documentation to confirm exact manufacturing specifications and compliance status. Ensure the DPAK(L) package dimensions match your PCB footprint requirements precisely. Cross-reference the manufacturer part number with authorized distributor catalogs to confirm authenticity and traceability before procurement.
Selection Notes
Select this component when a 60V N-channel MOSFET with 5A continuous current capability is required in a DPAK(L) package. Consider its thermal performance characteristics relative to your heat dissipation strategy. Evaluate gate charge parameters if high-frequency switching is involved. Confirm that the voltage and current ratings provide adequate margin for your specific application load conditions.
Part Context
This component belongs to Renesas Electronics Corporation's portfolio of discrete power semiconductors. The company specializes in embedded processors, analog, power, and connectivity products. The 2SK1949L-E represents their offering in the single FET category, targeting applications needing reliable power switching solutions within defined voltage and current limits.
Replacement Considerations
Consult official Renesas substitution guides or equivalent manufacturer cross-reference lists for verified alternatives. Do not assume pin-compatible substitutes without verifying electrical parameter equivalence. Check for updated versions or revised packages from the original manufacturer.
