2SK1957-E

$1.96

Description：N-CHANNEL POWER MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk

SKU:0ba0291e1801 Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：N-CHANNEL POWER MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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2SK1957-E

Overview

The 2SK1957-E is a silicon N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a three-terminal surface-mount design with a lead count of three. The device operates as a single-channel switch with a typical input capacitance (Ciss) of 700 pF. It is constructed to provide low on-resistance and high-speed switching capabilities while maintaining low drive current requirements.

Feature Summary

Low on-resistance for efficient conduction
High-speed switching performance
Low drive current requirement
No secondary breakdown

Applications

Industrial equipment
Consumer electronics

Procurement Notes

Verify the specific suffix 'E' indicates RoHS compliance and tube carrier type as documented in distributor listings. Confirm the component matches the silicon N-channel specification and three-terminal package configuration required for the target circuit design before finalizing procurement orders.

Selection Notes

Select this component for applications requiring an N-channel power MOSFET with high-speed switching characteristics. Ensure the design accommodates the 700 pF typical input capacitance and utilizes the surface-mount package format suitable for automated assembly processes in industrial or consumer environments.

Part Context

This part belongs to the single FET category within Renesas Electronics Corporation's discrete semiconductor portfolio. It serves as a power switching element designed for general-purpose applications where low drive current and fast switching speeds are critical operational parameters.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical specifications when considering alternative components from other manufacturers.