2SK1971-E

$19.98

Description：N-CHANNEL POWER MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk

SKU:a77c2a285823 Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：N-CHANNEL POWER MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

Download product information

2SK1971-E

Overview

The 2SK1971-E is a silicon N-channel power MOSFET manufactured by Renesas Electronics Corporation. It is housed in a TO-3PL package with three leads and supplied in tubes. The device features a typical input capacitance (Ciss) of 4320 pF. Designed for high-power switching applications, it offers low on-resistance and high-speed switching capabilities suitable for industrial and consumer use.

Feature Summary

Low on-resistance
High speed switching
No secondary breakdown

Applications

Switching regulator
DC-DC converter
Industrial applications
Consumer use

Procurement Notes

Verify the specific datasheet version and ordering information directly from Renesas Electronics Corporation or authorized distributors. Confirm that the TO-3PL package type and tube packaging align with your assembly requirements. Ensure compliance with RoHS standards as indicated by the lead-free designation.

Selection Notes

Select this component for applications requiring robust N-channel power switching with low drive current needs. Consider the thermal performance characteristics inherent to the TO-3PL package when designing heat dissipation solutions. Verify that the input capacitance value fits within your gate drive circuit constraints.

Part Context

This part belongs to Renesas' portfolio of discrete power semiconductors. It serves as a fundamental building block for power conversion stages in various electronic systems. The TO-3PL form factor provides a balance between power handling capability and mounting flexibility for printed circuit board implementations.

Replacement Considerations

Consult official Renesas documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without verifying pinout, electrical parameters, and package dimensions against the original specifications.