2SK2009TE85LF

Overview

The Toshiba Semiconductor and Storage 2SK2009 is a silicon N-channel enhancement-mode MOSFET designed for high-speed switching and analog applications. It features a low gate threshold voltage ranging from 0.5 V to 1.5 V, ensuring efficient drive characteristics. The device provides excellent switching times with typical turn-on and turn-off durations of 0.06 μs and 0.12 μs respectively. It maintains a low drain-source ON resistance of 1.2 Ω (typical) at VGS = 2.5 V. Rated for a maximum drain-source voltage of 30 V and DC drain current of 200 mA, it operates within a channel temperature range up to 150 °C.

Feature Summary

• High input impedance suitable for sensitive signal paths
• Low gate threshold voltage enabling direct logic interface compatibility
• Rapid switching performance optimized for high-frequency operation
• Compact SC-59 surface-mount package design

Applications

• High-speed switching circuits
• Analog switch implementations
• Battery-powered portable devices
• Low-voltage power management systems

Procurement Notes

Verify the specific ordering suffix matches the required tape-and-reel packaging configuration. Confirm that the component meets all applicable environmental compliance standards relevant to your manufacturing region. Ensure proper electrostatic discharge handling protocols are strictly followed during storage and assembly processes to prevent damage to the sensitive gate oxide layer.

Selection Notes

Select this component when low gate drive voltage and fast transition speeds are critical requirements. Evaluate the thermal dissipation capabilities against the expected load conditions to ensure the junction temperature remains within safe operating limits. Consider the small physical footprint if space constraints are a primary design factor in the target application.

Part Context

This part belongs to Toshiba's discrete field-effect transistor portfolio, specifically engineered for compact electronic designs. It utilizes a silicon-based construction housed in a JEDEC TO-236MOD or JEITA SC-59 package. The device represents a standard solution for general-purpose low-power switching tasks where size and speed are prioritized over high-current handling capabilities.

Replacement Considerations

Consult official Toshiba documentation for verified substitute part numbers before implementation. Cross-reference absolute maximum ratings and pin configurations to ensure functional compatibility. Verify that any alternative component meets the same electrical performance specifications and package dimensions required by the existing circuit layout.