2SK2035(T5L,F,T)

$0.35

Description：MOSFET N-CH 20V 100MA SSM
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR)

SKU:6662d5410188 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 20V 100MA SSM
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V
Rds On (Max) @ Id, Vgs：12Ohm @ 10mA, 2.5V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：10V
Input Capacitance (Ciss) (Max) @ Vds：8.5 pF @ 3 V
FET Feature：-
Power Dissipation (Max)：100mW (Ta)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SSM
Package / Case：SC-75, SOT-416

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2SK2035(T5L,F,T)

Overview

The Toshiba Semiconductor and Storage 2SK2035(T5L,F,T) is an N-channel MOS type transistor designed for high-speed switching and analog switching applications. It features a silicon junction construction with a maximum collector-emitter voltage of 50V and a continuous collector current rating of 150mA. The device operates within a temperature range of -40°C to +85°C and is housed in a small outline package suitable for surface mount technology.

Feature Summary

Engineered for high-speed switching operations
Optimized for analog switching applications
Utilizes N-channel MOS technology

Applications

High-speed switching circuits
Analog switching applications

Procurement Notes

Verify the specific suffix codes (T5L, F, T) against official Toshiba documentation to confirm exact packaging and tape-and-reel specifications. Ensure compatibility with surface mount assembly processes by checking the required reflow soldering profiles. Confirm that the selected variant meets the necessary moisture sensitivity level requirements for your manufacturing environment.

Selection Notes

Select this component when designing circuits requiring fast transition times and reliable analog signal routing. Consider the 50V breakdown voltage and 150mA current limits to ensure adequate headroom for your specific load conditions. Evaluate the thermal performance within the specified operating temperature range to maintain stability during continuous operation.

Part Context

This part belongs to the 2SK series of N-channel MOS transistors from Toshiba Semiconductor and Storage. These devices are characterized by their rapid switching capabilities and are commonly integrated into power management and signal processing modules where compact form factors and efficient control are prioritized over high-power handling.