ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：JFET N-CH 50V 6.5MA SC59
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：50 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：2.6 mA @ 10 V
- Current Drain (Id) - Max：6.5 mA
- Voltage - Cutoff (VGS off) @ Id：400 mV @ 100 nA
- Input Capacitance (Ciss) (Max) @ Vds：8.2pF @ 10V
- Resistance - RDS(On)：-
- Power - Max：100 mW
- Operating Temperature：125°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SC-59
- Grade：-
- Qualification：-
Download product information
Overview
The Toshiba 2SK208-GR(TE85L,F) is a silicon N-channel junction field-effect transistor (JFET) designed for general-purpose, impedance conversion, and condenser microphone applications. It features a high gate-drain breakdown voltage of −50 V and an extremely low gate cut-off current of −1.0 nA maximum at −30 V. The device offers a typical noise figure of 0.5 dB at 120 Hz with a 100 kΩ source resistance. Electrical characteristics include a drain current range of 2.6 to 6.5 mA and a forward transfer admittance of 1.2 mS. It operates within a junction temperature range of −55 °C to 125 °C.
Feature Summary
- High input impedance with minimal gate leakage current
- Low noise performance suitable for sensitive audio circuits
- Robust gate-drain breakdown voltage rating
Applications
- General-purpose amplification
- Impedance conversion stages
- Condenser microphone preamplifiers
Procurement Notes
Verify the specific GR suffix classification during procurement to ensure the correct drain current range of 2.6 to 6.5 mA. Confirm that the TE85L,F ordering suffix corresponds to the required SC-59 surface-mount package configuration. Ensure compliance with RoHS directives and verify environmental specifications directly with the manufacturer or authorized distributor before finalizing orders.
Selection Notes
Select this component when a high-input-impedance JFET with low noise characteristics is required for signal conditioning. The GR variant specifically targets applications needing higher drain currents compared to standard R or O classifications. Evaluate thermal derating requirements carefully, as the power dissipation limit is restricted to 100 mW in surface-mount configurations.
Part Context
This part belongs to the 2SK208 series of N-channel silicon JFETs manufactured by Toshiba Semiconductor and Storage. The series is engineered for small-signal processing tasks where high input impedance and low distortion are critical. The TE85L,F suffix indicates a specific tape-and-reel packaging format compatible with automated surface-mount assembly processes.
Replacement Considerations
Direct substitutes may include other N-channel JFETs with similar breakdown voltages and noise figures. Verify pinout compatibility and electrical parameter overlaps, particularly the drain current range and forward transfer admittance, before implementing any cross-brand replacements.
FAQ
What is the specific drain current range for the GR classification?
The GR classification specifies a drain current (IDSS) range of 2.6 to 6.5 mA at VDS = 10 V and VGS = 0.
How does the device perform in terms of noise at low frequencies?
The device exhibits a typical noise figure of 0.5 dB at 120 Hz when driven by a source resistance of 100 kΩ.
What is the maximum allowable gate-source voltage?
The absolute maximum rating for gate current is 10 mA, but the gate-source cut-off voltage can reach up to −5.0 V under specific test conditions.
