2SK208-O(TE85L,F)

2SK208-O(TE85L,F)

$0.44
  • Description:JFET N-CH 50V 6.5MA SC59
  • Series:-

SKU:60d6c70d72d0 Category: Brand:

  
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Product Detailed Parameters

  • Description:JFET N-CH 50V 6.5MA SC59
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):50 V
  • Drain to Source Voltage (Vdss):-
  • Current - Drain (Idss) @ Vds (Vgs=0):600 µA @ 10 V
  • Current Drain (Id) - Max:6.5 mA
  • Voltage - Cutoff (VGS off) @ Id:400 mV @ 100 nA
  • Input Capacitance (Ciss) (Max) @ Vds:8.2pF @ 10V
  • Resistance - RDS(On):-
  • Power - Max:100 mW
  • Operating Temperature:125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SC-59
  • Grade:-
  • Qualification:-

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2SK208-O(TE85L,F)

Overview

The Toshiba 2SK208-O(TE85L,F) is a silicon N-channel junction field-effect transistor (JFET) designed for general-purpose, impedance conversion, and condenser microphone applications. It features a TO-236MOD (SC-59) surface-mount package with three pins. Key electrical parameters include a gate-drain breakdown voltage of −50 V, a maximum drain power dissipation of 100 mW, and a typical noise figure of 0.5 dB at 120 Hz. The device operates within a junction temperature range of −55 °C to 125 °C. The 'O' suffix designates a specific drain current classification of 0.60 mA to 1.40 mA.

Feature Summary

  • High input impedance with low gate cut-off current
  • Low noise performance suitable for sensitive audio circuits
  • High breakdown voltage capability

Applications

  • General purpose amplification
  • Impedance converter circuits
  • Condenser microphone preamplifiers

Procurement Notes

Verify the ordering suffix matches the required drain current specification. Confirm the package type corresponds to SC-59 or TO-236MOD standards. Ensure compliance with environmental directives such as RoHS before finalizing procurement orders.

Selection Notes

Select this component when low noise and high input impedance are critical requirements. The O variant provides a moderate drain current range compared to other classifications in the series. Evaluate thermal derating guidelines for continuous operation near maximum ratings.

Part Context

This part belongs to the 2SK208 family of N-channel JFETs manufactured by Toshiba Semiconductor. The TE85L,F suffix indicates tape-and-reel packaging for automated assembly processes. The device utilizes silicon technology optimized for small-signal analog applications.

Replacement Considerations

Consult official documentation for direct substitutes. Verify pinout compatibility and electrical parameter overlaps before integrating alternative components into existing designs.

FAQ

What is the specific drain current range for the 2SK208-O variant?

The O suffix indicates a drain current (IDSS) classification ranging from 0.60 mA to 1.40 mA.

What is the maximum gate-drain breakdown voltage?

The absolute maximum rating for gate-drain breakdown voltage is −50 V.

Is this component suitable for condenser microphone applications?

Yes, the datasheet explicitly lists condenser microphone applications as a primary use case due to its low noise characteristics.

2SK208-O(TE85L,F)2SK208-O(TE85L,F)
$0.44
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