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The Toshiba 2SK208-O(TE85L,F) is a silicon N-channel junction field-effect transistor (JFET) designed for general-purpose, impedance conversion, and condenser microphone applications. It features a TO-236MOD (SC-59) surface-mount package with three pins. Key electrical parameters include a gate-drain breakdown voltage of −50 V, a maximum drain power dissipation of 100 mW, and a typical noise figure of 0.5 dB at 120 Hz. The device operates within a junction temperature range of −55 °C to 125 °C. The 'O' suffix designates a specific drain current classification of 0.60 mA to 1.40 mA.
Verify the ordering suffix matches the required drain current specification. Confirm the package type corresponds to SC-59 or TO-236MOD standards. Ensure compliance with environmental directives such as RoHS before finalizing procurement orders.
Select this component when low noise and high input impedance are critical requirements. The O variant provides a moderate drain current range compared to other classifications in the series. Evaluate thermal derating guidelines for continuous operation near maximum ratings.
This part belongs to the 2SK208 family of N-channel JFETs manufactured by Toshiba Semiconductor. The TE85L,F suffix indicates tape-and-reel packaging for automated assembly processes. The device utilizes silicon technology optimized for small-signal analog applications.
Consult official documentation for direct substitutes. Verify pinout compatibility and electrical parameter overlaps before integrating alternative components into existing designs.
The O suffix indicates a drain current (IDSS) classification ranging from 0.60 mA to 1.40 mA.
The absolute maximum rating for gate-drain breakdown voltage is −50 V.
Yes, the datasheet explicitly lists condenser microphone applications as a primary use case due to its low noise characteristics.