2SK209-Y(TE85L,F)

Overview

The Toshiba 2SK209-Y(TE85L,F) is a silicon N-channel junction field-effect transistor (JFET) designed for audio frequency low noise amplifier applications. It features a high forward transfer admittance of 15 mS typical at VDS = 10 V and VGS = 0, alongside a high breakdown voltage of VGDS = −50 V. The device exhibits low noise characteristics with a noise figure of 1.0 dB typical under specified conditions. Electrical parameters include a gate cut-off current of −1.0 nA maximum at VGS = −30 V and a drain current IDSS ranging from 1.2 to 3.0 mA for the Y classification. Absolute maximum ratings specify a drain power dissipation of 150 mW and a junction temperature limit of 125 °C.

Feature Summary

• High forward transfer admittance optimized for signal amplification
• Low noise figure suitable for sensitive audio circuits
• High gate-drain breakdown voltage providing robust operation
• Small surface-mount package for compact designs

Applications

• Audio frequency low noise amplifier circuits
• High input impedance preamplifier stages
• Precision analog signal conditioning

Procurement Notes

Verify the specific ordering suffix TE85L,F confirms the SOT-346/SC-59 tape and reel packaging format required for automated assembly. Ensure the Y classification matches the required drain current range of 1.2 to 3.0 mA for your design specifications. Confirm compliance with environmental directives such as RoHS if applicable to your manufacturing region. Review the latest Toshiba Semiconductor Reliability Handbook for derating guidelines before finalizing component selection.

Selection Notes

Select this component when designing audio preamplifiers requiring minimal noise contribution and high input impedance. The Y classification restricts the drain current to 1.2–3.0 mA; verify this aligns with your biasing requirements compared to GR or BL variants. Consider the 150 mW power dissipation limit and ensure adequate thermal management within the SC-59 package. The high VGDS rating allows for flexible gate biasing configurations in high-voltage signal paths.

Part Context

This JFET belongs to Toshiba's discrete semiconductor lineup focused on analog signal processing. It utilizes a silicon N-channel junction technology housed in a JEDEC TO-236 or JEITA SC-59 compatible surface-mount package. The device was originally introduced in June 1981 and remains in production for legacy and modern audio equipment manufacturing.

Replacement Considerations

Direct substitutes are not explicitly listed in the provided documentation. Verify compatibility with other Toshiba JFETs by comparing IDSS classifications and pinout configurations. Cross-referencing with equivalent part numbers requires independent validation of electrical parameters and physical dimensions.