2SK2145-Y(TE85L,F)

Overview

The Toshiba 2SK2145-Y(TE85L,F) is a dual N-channel junction field-effect transistor (JFET) housed in an SM5 surface-mount package. It features a gate-drain breakdown voltage of -50 V and a total drain power dissipation of 300 mW. The Y suffix designates a specific drain current classification with a minimum of 1.2 mA and a maximum of 3.0 mA at VDS = 10 V and VGS = 0. The device provides a typical forward transfer admittance of 15 mS and achieves a noise figure of 1.0 dB under standard test conditions.

Feature Summary

• Dual N-channel JFET configuration integrated into a compact five-lead super mini type package
• High gate-drain breakdown voltage capability for robust operation
• Low noise performance suitable for sensitive audio frequency applications
• High input impedance with minimal gate leakage current

Applications

• Audio frequency low noise amplifier circuits
• High-impedance signal processing stages
• Precision analog front-end designs

Procurement Notes

Verify the ordering suffix matches the required drain current specification, as the Y designation indicates a specific Idss range of 1.2 to 3.0 mA. Confirm the package type is SM5 and ensure compliance with RoHS standards. Review the Toshiba Semiconductor Reliability Handbook for derating guidelines before finalizing procurement specifications.

Selection Notes

Select this component when a dual JFET configuration is required within a small footprint. The Y variant is appropriate for designs needing lower drain current compared to GR or BL classifications. Ensure the application operates within the specified junction temperature limits and accounts for the total power dissipation rating across both internal devices.

Part Context

This part belongs to the 2SK2145 series of silicon N-channel junction FETs designed specifically for audio frequency low noise amplifier applications. The series utilizes a common-source configuration with two elements per package. The TE85L,F suffix denotes the specific tape-and-reel packaging format used for automated surface-mount assembly processes.

Replacement Considerations

Direct substitutes include other 2SK2145 variants such as the 2SK2145-GR and 2SK2145-BL, which share identical electrical characteristics but differ in drain current classification ranges. Verify that the alternative variant's Idss limits align with the circuit requirements.